When the P-region or Anode of the diode is connected to the positive terminal of the external DC source and N-region or Cathode of the diode is connected to the negative terminal of the external DC source. At that time we can say that the Diode is in "Forward Biased" condition.
The Forward Biased condition is indicated in the Fig.14a.
Fig.14a
When the Diode is in Forward biased condition, the free electrons from n-side are pushed towards the p-side. Similarly the holes from p-sides are pushed towards the n-side.
With increase in the external supply voltage V, more and more number of holes and electrons start traveling towards the junction.
Thus the holes will start converting the negative ions into the neutral atoms and the electrons will start converting the positive ions into the neutral atoms. Therefore we can say that "the width of the Depletion Layer or Region will reduce".
Due to reduction in the depletion region width, the barrier potential will also reduce. Then At a particular value of V the Depletion region will collapse. There are no traveling of holes and electrons.
Fig.14b
The large number of majority carrier crossing the junction produces a current called as the "Forward Current" which indicated in the Fig.14b.
The End.
Also look out;
Post-15 How P-N Junction Diode Is Work In Reverse Biasing ?
Post-13 Biasing Of A P-N Junction Diode(With External Bias)
The Forward Biased condition is indicated in the Fig.14a.
Fig.14a
When the Diode is in Forward biased condition, the free electrons from n-side are pushed towards the p-side. Similarly the holes from p-sides are pushed towards the n-side.
With increase in the external supply voltage V, more and more number of holes and electrons start traveling towards the junction.
Thus the holes will start converting the negative ions into the neutral atoms and the electrons will start converting the positive ions into the neutral atoms. Therefore we can say that "the width of the Depletion Layer or Region will reduce".
Due to reduction in the depletion region width, the barrier potential will also reduce. Then At a particular value of V the Depletion region will collapse. There are no traveling of holes and electrons.
Fig.14b
The large number of majority carrier crossing the junction produces a current called as the "Forward Current" which indicated in the Fig.14b.
The End.
Also look out;
Post-15 How P-N Junction Diode Is Work In Reverse Biasing ?
Post-13 Biasing Of A P-N Junction Diode(With External Bias)
God Bless Thx.....
